| PART |
Description |
Maker |
| 3BH41 3GH41 EE08669 |
Silicon diffused type fast recovery diode for high speed rectifier applications
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS)
From old datasheet system
HIGH SPEED RECTIFIER APPLICATION (FAST RECOVERY)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| RM20C1A-XXF RM20DA/CA/C1A-XXF RM20CA-XXF RM20DA-XX |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
| SCFS12000 SCFS10000 SCFS2000 SCFS4000 SCFS6000 SCF |
1.5 A, 4000 V, SILICON, RECTIFIER DIODE
FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
High Voltage,High Density Fast Recovery Rectifier(反向电压4000V，温55℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压6000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压12000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压2000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压10000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(????靛?12000V锛?俯搴?5???骞冲??存??垫?1.5A,楂??锛??瀵?害锛?揩???澶??娴??)
|
Semtech Corporation
|
| 1S1835 1S1834 |
HIGH SPEED RECTIFIER APPLICATIONS(FAST RECOVERY)
RECTIFIER (HIGH SPEED RECTIFIER APPLATIONS)
HIGH SPEED RECTIFIER APPLICATIONS.(FAST RECOVERY)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 1JU42 |
HIGH SPEED RECTIFIER APPLICATIONS (FAST RECOVERY)
|
TOSHIBA
|
| U05JH44 |
HIGH SPEED RECTIFIER APPLICATIONS(FAST RECOVERY)
|
TOSHIBA[Toshiba Semiconductor]
|
| S5295B S5295G S5295J |
High Speed Rectifier Applications (fast recovery)
|
TOSHIBA[Toshiba Semiconductor]
|
| 500EXH22 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 800JXH23 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| RM100HA-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| IKW15N120H3 |
High speed Duopack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode
|
http://
|
| HC26 HC38 HC35 HC79R2J224K HC26R2A103K HC26R2A123K |
NTE IC, POWER: 6 W, PACKAGE: 10 PIN SIP
SRAM Memory IC; Memory Type:MOS SRAM; Interface Type:Serial; Access Time, Tacc:300ns; Package/Case:22-DIP; Mounting Type:Through Hole
Voltage Regulator IC; Output Current:100mA; Output Voltage:9V; Package/Case:3-TO-92; Voltage Regulator Type:Positive Voltage; Mounting Type:Through
DIODE ZENER 150MW 33V 0603
RECT FAST REC 400V 8A TO-220A 高压多层陶瓷电容
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:200V; Forward Current Avg Rectified, IF(AV):250mA; Forward Voltage Max, VF:1.25V; Vf Test Current:200mA; Reverse Recovery Time, trr:50ns; Power Dissipation, Pd:400mW 高压多层陶瓷电容
MEDIUM/HIGH VOLTAGE MULTILAYER CERAMIC CAPACITORS 高压多层陶瓷电容
RECT FAST REC 600V 8A TO-220A 高压多层陶瓷电容
RECTIFIER BRIDGE 10A 100V 170A-ifsm 1.05V-vf 10uA-ir GBJ 15/TUBE 高压多层陶瓷电容
|
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
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